Capacity 512GB Form factor M.2 2280 NAND Flash 3D NAND Controller RTS5766DL Interface PCIe Gen3 x4 Sequential Read (Max) Up to 2,400MB/s Sequential Write (Max) Up to 1,800MB/s 4KB Random Read IOPS(Max) Up to 200K 4KB Random Write IOPS(Max) Up to 150K Operating temperature 0°C - 70°C Storage temperature -40°C - 85°C Shock resistance 1500G/0.5ms MTBF 1,500,000 hours Terabytes Written (TBW) 520TB
